Researchers create gallium nitride semiconductors doped with beryllium

Physicists at Aalto University have made a breakthrough in revising methods largely discarded 15 years ago. They have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used in electronic devices that distribute large amounts of electric power.

Researchers create gallium nitride semiconductors doped with beryllium

Physicists at Aalto University have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used in electronic devices that distribute large amounts of electric ...

Fri 10 Nov 17 from Phys.org

The next generation of power electronics? Gallium nitride doped with beryllium

Physicists have made a breakthrough in revising methods largely discarded 15 years ago. They have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used ...

Thu 9 Nov 17 from ScienceDaily

The next generation of power electronics? Gallium nitride doped with beryllium, Thu 9 Nov 17 from Eurekalert

The next generation of power electronics? Gallium nitride doped with beryllium , Thu 9 Nov 17 from AlphaGalileo

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